Part Number : OW6264CC3-15
Alternate P/N : OW6264CC315
NSN : 5962012333489
Item Name : Microcircuit Memory
Manufacturer : American Business Alliance Inc
CAGE Code : 08040
FSC Details : 5962 microcircuits electronic
Good news! Part number OW6264CC3-15 with NSN 5962012333489 by American Business Alliance Inc is available and ready to ship. NSN Sourcing, owned and operated by ASAP Semiconductor, offers the fastest lead times in the industry. If you are interested in ordering part number OW6264CC3-15, leave your procurement process to us. Simply fill out the fields in the RFQ below. Your responses to the asterisk (*) marked fields are necessary in order to build your quote possible.
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A National Stock Number, or NATO Stock Number (NSN), is allocated by the Defense Logistics Agency (DLA) and suggests that an item is procured, stocked, and issued through the federal supply system. The NSN part OW6264CC3-15 is recognized by the United States Department of Defense and the North Atlantic Treaty Organization (NATO). Not sure if this is what you’re looking for? No problem. To receive more information about NSN Number 5306015721907, please contact us at our toll-free number +1-714-705-4780 or email us at sales@nsn-sourcing.com.
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-233-3489 Item Description: Microcircuit Memory | 5962 | 012333489 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Ow6264cc3-15 | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 560 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 460 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 045 INCHES NOMINAL |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING495 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN25 INPUT |
MEMORY | CRHL | BIT QUANTITY65536 |
MEMORY | CSWJ | WORD QUANTITY8192 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 LEADLESS |
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