Are you in the market for 5962-01-466-0645 NSN parts such as 5962 3829410MXX, 5962-38294, 5962-3829410MXA, 5962-3829410MXB, IDT7164L45D8 from manufactures like Dla Land And Maritime, Integrated Device Technology Inc, Pyramid Semiconductor Corp, Performance Semiconductor Corp? The National Stock Number (NSN) is a 13-digit serial number assigned by the US Defense Logistics Agency (DLA) to items that are procured, stocked, and issued through the federal supply system. Use our optimized search engine to find your required parts for NSN 5962-01-466-0645—then submit an instant RFQ for a quick, competitive quote. Here at NSN Sourcing, we make your purchasing process as simple and efficient as possible.
| Part Number's List for NSN 5962-01-466-0645 | |
| Item Name: | Microcircuit Memory |
| Federal Supply Class (FSC): | 5962 Microcircuits Electronic |
| CAGE Code: | 67268, 61772, 3DTT2, 75569 |
| NIIN: | 014660645 |
| Manufacturers: | Dla Land And Maritime , Integrated Device Technology Inc , Pyramid Semiconductor Corp , Performance Semiconductor Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5962 3829410MXX | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-38294 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-3829410MXA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-3829410MXB | dla land and maritime | microcircuit memory | Avl | RFQ |
| IDT7164L45D8 | integrated device technology inc | microcircuit memory | Avl | RFQ |
| P4C164L-45DWMB | pyramid semiconductor corp | microcircuit memory | Avl | RFQ |
| P4C164L-45DWMB | performance semiconductor corp | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | NUCLEAR POWER PLANTS |
| CBBL | FEATURES PROVIDED | MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 8K X 8 STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | DATA RETENTION - YES/ACCESS TIME - 45 NS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
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